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| Advance Product Information September 19, 2005 DC - 12 GHz Discrete power pHEMT * * * * * * * * TGF2021-12 Key Features and Performance Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA) Chip Dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) Product Description The TriQuint TGF2021-12 is a discrete 12 mm pHEMT which operates from DC-12 GHz. The TGF2021-12 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2021-12 typically provides 42 dBm of saturated output power with power gain of 11 dB. The maximum power added efficiency is 59% which makes the TGF2021-12 appropriate for high efficiency applications. The TGF2021-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2021-has a protective surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Primary Applications * * * * * 35 30 Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications Maximum Gain (dB) 25 20 15 10 5 0 0 2 4 MSG MAG 6 8 10 12 14 16 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information September 19, 2005 TABLE I MAXIMUM RATINGS Symbol V + - TGF2021-12 Value 12.5 V -5V to 0V 5.6 A 70 mA 36 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/ Parameter 1/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Notes 2/ V I+ | IG | PIN PD TCH TM TSTG 1/ 2/ 3/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 8.3 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4/ TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal) Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 3600 4500 -1 Maximum -0.5 -14 -14 Unit mA mS V V V Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 19, 2005 TABLE III RF CHARACTERIZATION TABLE 1/ (TA = 25 C, Nominal) SYMBOL Power Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 41 58 11.5 3.65 6.484 0.956 176.1 41.8 52 11 4.06 6.223 Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 41.5 49 11 2.09 5.861 0.949 177.7 42 47 11 2.86 5.787 TGF2021-12 PARAMETER Vd = 10V Idq = 900mA Vd = 12V Idq = 900mA UNITS dBm % dB pF - 0.947 176.7 dBm % dB pF - 0.852 165.7 1/ Values in this table are scaled from measurements taken from a 1.5mm unit pHEMT cell at 10 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz 4/ The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance Test Conditions TCH (oC) TJC (qC/W) TM (HRS) Vd = 10 V 142 8.3 2E+6 (channel to backside of carrier) Idq = 900 mA Pdiss = 8.96 W Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information September 19, 2005 TGF2021-12 Linear Model for 1.5mm Unit pHEMT Cell Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain vi - Ls Rp, Cp 8QLW S+(07 FHOO 5HIHUHQFH 3ODQH Rs Source Gate Source Source Drain UPC Source UPC = 1.5 mm Unit pHEMT Cell MODEL PARAMETER Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd Vd = 8 V Idq = 112.5 mA 0.430 0.090 0.320 0.450 3.504 0.950 0.300 100.040 0.170 6.640 0.070 0.098 0.042 28700 282000 Vd = 8 V Idq = 150 mA 0.430 0.080 0.320 0.457 3.770 0.940 0.303 102.720 0.158 7.050 0.070 0.098 0.040 26700 304000 Vd = 8 V Vd = 10 V Idq = 187.5 mA Idq = 112.5 mA 0.430 0.008 0.330 0.445 3.938 0.960 0.306 107.550 0.150 7.470 0.070 0.098 0.040 24000 217000 0.430 0.100 0.300 0.426 3.800 0.960 0.301 116.310 0.151 7.600 0.070 0.098 0.040 25500 30400 Vd = 10 V Idq = 150 mA 0.430 0.090 0.320 0.429 3.974 0.980 0.304 118.32 0.147 7.920 0.070 0.098 0.039 29500 312000 Vd = 12 V Idq = 112.5 mA 0.430 0.110 0.280 0.407 3.945 0.990 0.301 127.590 0.143 8.260 0.070 0.098 0.039 18100 241000 UNITS S pF pF pF pS nH nH nH TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 4 Advance Product Information September 19, 2005 TGF2021-12 Linear Model for 12mm pHEMT L - via = 0.0135 nH (9x) 8 UPC 9 7 UPC 10 6 UPC 11 Gate Pads (8x) 5 UPC 12 Drain Pads (8x) 4 UPC 13 3 UPC 14 2 UPC 15 1 UPC 16 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information September 19, 2005 TGF2021-12 Unmatched S-parameter for 12mm pHEMT Bias Conditions: Vd=12V Idq=900mA Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.174 -170.57 16.046 91.04 -42.423 4.64 -1.989 -177.60 1 -0.173 -175.33 10.021 84.91 -42.446 2.14 -1.958 -177.91 1.5 -0.171 -176.93 6.460 80.41 -42.518 1.29 -1.927 -177.64 2 -0.170 -177.76 3.903 76.35 -42.621 0.92 -1.889 -177.26 2.5 -0.168 -178.26 1.889 72.50 -42.751 0.83 -1.842 -176.86 3 -0.165 -178.61 0.216 68.79 -42.905 0.96 -1.788 -176.48 3.5 -0.163 -178.88 -1.226 65.20 -43.081 1.29 -1.728 -176.14 4 -0.160 -179.09 -2.501 61.73 -43.276 1.84 -1.665 -175.84 4.5 -0.157 -179.26 -3.650 58.35 -43.484 2.62 -1.598 -175.59 5 -0.154 -179.41 -4.700 55.08 -43.702 3.63 -1.530 -175.39 5.5 -0.151 -179.54 -5.670 51.92 -43.925 4.88 -1.461 -175.24 6 -0.148 -179.66 -6.575 48.85 -44.148 6.39 -1.393 -175.13 6.5 -0.145 -179.78 -7.425 45.90 -44.364 8.15 -1.326 -175.07 7 -0.141 -179.88 -8.227 43.04 -44.569 10.16 -1.261 -175.04 7.5 -0.138 -179.98 -8.987 40.28 -44.756 12.41 -1.198 -175.04 8 -0.135 179.92 -9.712 37.62 -44.918 14.88 -1.137 -175.08 8.5 -0.133 179.83 -10.403 35.05 -45.052 17.55 -1.079 -175.14 9 -0.130 179.74 -11.065 32.57 -45.151 20.38 -1.024 -175.22 9.5 -0.128 179.65 -11.701 30.18 -45.212 23.34 -0.972 -175.32 10 -0.125 179.56 -12.312 27.88 -45.233 26.38 -0.922 -175.44 10.5 -0.123 179.47 -12.901 25.65 -45.213 29.46 -0.876 -175.57 11 -0.121 179.39 -13.469 23.51 -45.152 32.53 -0.832 -175.72 11.5 -0.120 179.31 -14.019 21.45 -45.052 35.56 -0.790 -175.87 12 -0.118 179.23 -14.550 19.46 -44.917 38.50 -0.751 -176.03 12.5 -0.116 179.15 -15.064 17.54 -44.749 41.33 -0.715 -176.20 13 -0.115 179.08 -15.562 15.69 -44.553 44.02 -0.681 -176.37 13.5 -0.113 179.00 -16.045 13.91 -44.333 46.57 -0.648 -176.55 14 -0.111 178.93 -16.513 12.19 -44.094 48.96 -0.618 -176.73 14.5 -0.110 178.85 -16.968 10.52 -43.840 51.18 -0.590 -176.91 15 -0.108 178.78 -17.410 8.91 -43.575 53.25 -0.563 -177.09 15.5 -0.107 178.70 -17.841 7.35 -43.302 55.15 -0.538 -177.27 16 -0.105 178.63 -18.260 5.84 -43.023 56.92 -0.514 -177.45 16.5 -0.104 178.55 -18.670 4.38 -42.742 58.54 -0.492 -177.64 17 -0.103 178.48 -19.070 2.97 -42.459 60.03 -0.471 -177.82 17.5 -0.101 178.41 -19.460 1.59 -42.177 61.40 -0.451 -178.00 18 -0.100 178.34 -19.843 0.26 -41.897 62.66 -0.433 -178.18 18.5 -0.099 178.26 -20.217 -1.03 -41.620 63.81 -0.415 -178.36 19 -0.098 178.19 -20.584 -2.29 -41.346 64.88 -0.399 -178.54 19.5 -0.097 178.12 -20.944 -3.50 -41.076 65.85 -0.383 -178.72 20 -0.096 178.05 -21.298 -4.69 -40.810 66.75 -0.368 -178.90 20.5 -0.096 177.98 -21.646 -5.83 -40.549 67.58 -0.354 -179.07 21 -0.095 177.91 -21.989 -6.95 -40.293 68.34 -0.341 -179.24 21.5 -0.094 177.83 -22.326 -8.03 -40.042 69.04 -0.328 -179.42 22 -0.093 177.76 -22.658 -9.08 -39.795 69.68 -0.316 -179.59 22.5 -0.093 177.69 -22.986 -10.10 -39.554 70.28 -0.304 -179.76 23 -0.092 177.62 -23.310 -11.10 -39.318 70.83 -0.294 -179.92 23.5 -0.091 177.55 -23.629 -12.07 -39.086 71.34 -0.283 179.91 24 -0.091 177.48 -23.946 -13.01 -38.859 71.81 -0.273 179.74 24.5 -0.090 177.41 -24.259 -13.94 -38.637 72.24 -0.264 179.58 25 -0.090 177.35 -24.569 -14.85 -38.419 72.64 -0.255 179.42 25.5 -0.089 177.28 -24.877 -15.75 -38.206 73.01 -0.246 179.26 26 -0.089 177.21 -25.184 -16.63 -37.997 73.35 -0.238 179.10 Note: The s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 6 Advance Product Information September 19, 2005 TGF2021-12 Mechanical Drawing !("Ab !'!(Ab $d d !% 'Ab "d !$'$Ab !d !!%$Ab'(d !!%$Ab'(d (#$Ab&&d (#$Ab&&d *$7( %!$Ab%#d %!$Ab%#d '5$,1 "$Ab$ d "$Ab$ d ('$Ab"(d ('$Ab"(d %%$Ab!%d %%$Ab!%d "#$Ab #d " "Ab !d (%Ab#d Abd d b A d # b A $ ( d b A " % ! dd '! ! bb AA ($ %% #$ Vv)AAvyyvrrAvpur Uuvpxr)A A# 8uvArqtrAAiqAhqAqvrvAhrAuAAprrAsAiqAhq 8uvAvrAyrhpr)AAA$ BI9ADTA768FTD9@APAAHHD8 7qAhqAAEA 7qAQhqAAE 7qAQhqAAE ')AAAABhrAAAAAA(AA(A#AA# %)AA9hvAAAAA(AA(A#AA# A! 7qAhqAAEA( &)AAAAAAAAWtAAAAAAA(AA(A#AA# ')AAAAAAAAWtAAAAAAA(AA(A#AA# Ir)A7qAhqAAE &AEA 'AhrAhyrhrAthrAhq uhAphAirArqAsAhhyyryvtAA@U GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information September 19, 2005 TGF2021-12 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. Do not use flux Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 |
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